Nonlinear crystal HgGa2S4: structure, properties and application in nonlinear optics

Characteristics of the HgGa2​S4​ (HGS) crystal

Characteristics of the HgGa2​S4​ (HGS) crystal

1. Structural and physical properties:

  • Structure: defective chalcopyrite.
  • Point symmetry group: 4 (S4​).
  • Space group: S24​.
  • Crystal type: negative uniaxial (no​>ne​).
  • Symmetry class: tetragonal.
  • Melting point: 880 ∘C.
  • Density: 4,95 g/cm3.
  • Bandgap: 2,8–2,84 eV.

2. Optical properties:

  • Transparency range: 0,5–12,5–13 µm.
  • Birefringence: ne​−no​=−0,053.
  • Refractive index dispersion (experimental values):

λ (µm)

no​

ne​

0.5495

2.6592

2.5979

0.6500

2.5796

2.5264

1.0760

2.4774

2.4324

3.5400

2.4386

2.3979

11.000

2.3690

2.3290

3. Nonlinear optical properties:

  • Nonlinear coefficient: 26,8 pm/V.
  • Tensor nonlinearity components (at λ=1,064 µm):
  • d36​=(35,2±5,3) pm/V (1.8× higher than AgGaS2​);
  • d31​=(11,7±1,8) pm/V;
  • ratio d36​/d31​=+3.
  • Effective nonlinearity increases by ~50 % when implementing Type II three‑wave processes (eo‑e) in a crystal cut at φ=0∘.

4. Thermal and damage resistance properties:

  • Thermal conductivity: 0,028 W/cm⋅K.
  • Laser damage threshold:
  • surface: 60 MW/cm2 (τ=10 ns, λ=1,06 µm, single pulse);
  • bulk: 30 MW/cm2 (τ=18 ns, λ=1,064 µm, ν=10 Hz);
  • general damage resistance: 1 J/cm2.

5. Comparative advantages over AgGaS2​:

  • significantly higher second‑order nonlinear susceptibility;
  • enhanced resistance to laser radiation (including long‑term operation without damage at increased pulse repetition rates);
  • does not oxidise in air;
  • lower pump threshold for comparable crystal sizes;
  • higher conversion efficiency;
  • competitive performance vs. ZnGeP2​, AgGaSe2​, and GaSe crystals despite challenges in growing large‑size crystals.

6. Performance in optical parametric oscillators (OPOs):

  • pumping: nanosecond pulses from a Nd:YAG laser (λ=1064 nm, 100 Hz);
  • idler pulse duration: ∼5 ns (in the 4 µm region);
  • pulse energy: up to 6,1 mJ;
  • average power: up to 610 mW;
  • potential output energy: 10 mJ (> 1 W) and more than 5 mJ at idler wavelengths > 5 µm;
  • tuning range: 3,7–5,7 µm (with continuous tuning);
  • SHG efficiency for CO₂ laser: up to 10 % (for a 4 mm‑long element, τ=30 ns, power density 60 MW/cm2).

7. Practical applications:

  • mid‑IR optical parametric oscillators (OPO/OPA) pumped near 1 µm (Nd/Yb‑based systems);
  • coverage of the mid‑IR range up to ∼12 µm;
  • opto‑acoustic spectroscopy (monitoring volatile organic compounds in exhaled breath);
  • medical diagnostics (detection of markers for asthma, pneumonia, tuberculosis, lung cancer, diabetes, etc.);
  • neurosurgery: parametric frequency converter at 6,45 µm with 1 W output power for precision neuron surgery (removal of layers as thin as 1 µm);
  • use in high‑power systems with nanosecond and femtosecond pulses (e.g., synchronously pumped by Yb‑fiber lasers).

Scientific publications about the HgGa2S4 crystal


  1. V. V. Badikov, I. N. Matveev, V. L. Panyutin, S. M. Pshenichnikov, O. V. Rychik, N. K. Trotsenko, N. D. Ustinov. Growth and optical properties of mercury thiogallate. Sov. J. Quantum Electron. 9(8), 1068–1069 (1979) [translated from Kvantovaya Elektron. 7(10), 2235–2237 (1980)].
  2. S. A. Andreev, N. P. Andreeva, V. V. Badikov, I. N. Matveev, S. M. Pshenichnikov. Frequency up‑conversion in crystals of the Cdx​Hg1−x​Ga2​S4​ type. In: Proceedings of the All‑Union Conference on Coherent and Nonlinear Optics, Kiev, 14–17 Oct. 1980. Academy of Sciences of the USSR, Moscow, Russia, 1980, Part 1, p. 60 (in Russian).
  3. Yu. M. Andreev, P. P. Geiko, V. V. Badikov, G. C. Bhar, S. Das, A. K. Chaudhury. Nonlinear optical properties of defect tetrahedral crystals HgGa2​S4​ and AgGaGeS4​ and mixed chalcopyrite crystal Cd0,4​Hg0,6​Ga2​S4​. Nonlinear Optics 29(1), 19–27 (2002).
  4. P. P. Geiko, Yu. M. Andreev, V. V. Badikov. CO2​‑laser second harmonic generation in HgGa2​S4​. Russian Physics Journal 46(9), 947–949 (2003) [translated from Izvestiya Vysshikh Uchebnykh Zavedenii. Fizika 46(9), 87–89 (2003)].
  5. D. Ren, J. Huang, Y. Qu, X. Hu, L. Zhang, Y. Andreev, P. Geiko, V. Badikov, G. Lanskii, A. Tikhomirov. Optical properties and CO2​ laser SHG with HgGa2​S4​. Chinese Optics Letters 1(10), 613–615 (2003).
  6. V. Petrov, V. Badikov, V. Panyutin, G. Shevyrdyaeva, S. Sheina, F. Rotermund. Mid‑IR optical parametric amplification with femtosecond pumping near 800 nm using Cdx​Hg1−x​Ga2​S4​. Optics Communications 235(1–3), 219–226 (2004).
  7. V. Petrov, V. Badikov, G. Shevyrdyaeva, V. Panyutin, V. Chizhikov. Phase matching properties and optical parametric amplification in single crystals of AgGaGeS4​. Optical Materials 26(3), 217–222 (2004).
  8. V. Badikov, G. Shevyrdyaeva, V. Chizhikov, V. Panyutin, V. G. Xu, V. Petrov, F. Noack. Phase‑matched second harmonic generation at 1064 nm in quaternary crystals of silver thiogermanogallate. Applied Physics Letters 87(24), 2411137–3 (2005).
  9. V. Badikov, G. Shevyrdyaeva, V. Panyutin, V. Petrov, F. Noack. Phase‑matched second harmonic generation at 1064 nm in quaternary crystals of silver thiogermanogallate. In: Conference on Lasers and Electro‑Optics (CLEO 2005), Baltimore (MD), USA, 22–27 May 2005. Technical Digest (CD‑ROM), paper CFL3.
  10. V. Petrov, V. Badikov, V. Panyutin, G. Shevyrdyaeva, S. Sheina, V. Chizhikov, G. Xu, F. Noask, F. Rotermund. Progress in the growth, characterization and nonlinear optical applications of the mixed quaternary mid‑infrared crystals Cdx​Hg1−x​Ga2​S4​ and Agx​Gax​Ge1−x​S(Se)4​. In: MICS, Barcelona, November 2005, pp. 6–11.
  11. V. Petrov, V. Badikov, V. Panyutin. Quaternary nonlinear optical crystals for the mid‑infrared spectral range from 5 to 12 microns. In: NATO Science for Peace and Security Series B: Physics and Biophysics (eds M. Ebrahim‑Zadeh and I. Sorokina). Springer, 2008, pp. 105–147.
  12. D. B. Kolker, I. V. Sherstov, N. Yu. Kostyukova, A. A. Boyko, Yu. V. Kistenev, B. N. Nyushkov, K. G. Zenov, A. G. Shadrintseva, N. N. Tretyakova. Tunable laser source in the mid‑IR range with broad spectral coverage for optoacoustic spectroscopy. Quantum Electronics 49(1) (2019).
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